Abstract
A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1323-1328 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 27 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Keywords
- Emissivity
- Hotliner
- Pyrometer
- Si
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