Keyphrases
Indium Gallium Nitride (InGaN)
100%
Multiple Quantum Wells
100%
Sidewall
100%
Selective-area
100%
X-ray Diffraction Study
100%
Multi-facet
100%
Oxides
50%
Structural Properties
25%
Rate Ratio
25%
Synchrotron Techniques
25%
Growth Enhancement
25%
Crystal Orientation
25%
High-resolution X-ray Diffraction (HRXRD)
25%
Strain Variation
25%
Multiple Quantum Well Structure
25%
Metal Organic Vapor Phase Epitaxy (MOVPE)
25%
Diffraction Lines
25%
Selective Area Growth
25%
Global Strain
25%
Period Variation
25%
Vertical Growth Rate
25%
Vapor Phase Diffusion
25%
Facet Growth
25%
Physics
Flat Surface
100%
Multiple Quantum Well
100%
X Ray Diffraction
100%
High Resolution
20%
Synchrotron
20%
Vapor Phase
20%
Metalorganic Vapor Phase Epitaxy
20%
Earth and Planetary Sciences
Quantum Wells
100%
Flat Surface
100%
X Ray Diffraction
100%
Vapor Phase
20%
Synchrotron
20%
Vapor Phase Epitaxy
20%
Engineering
Ray Diffraction
100%
Quantum Well
100%
Side Wall
80%
High Resolution
20%
Structural Property
20%
Selective Area Growth
20%
Material Science
Quantum Well
100%
X-Ray Diffraction
100%
Oxide Compound
40%
Structural Property
20%
Vapor Phase Epitaxy
20%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%