Yield, metrology and inspection characteristics of SCALPEL masks

Keyphrases

• Metrology 100%
• Electron Beam Lithography 100%
• Scattering Characteristics 100%
• Wafer 50%
• Scatterer 33%
• Lithography Tool 33%
• Mask Blank 33%
• Plasma Etching Process 33%
• Operating Conditions 16%
• Electron Beam 16%
• Film Thickness 16%
• Tungsten 16%
• W Film 16%
• Strut 16%
• Flat Film 16%
• Defect Type 16%
• Cr Film 16%
• SF6 Plasma 16%
• SiNx 16%
• Line Edge Roughness 16%
• Minimum Contact 16%
• Yield Data 16%
• Contact Holes 16%
• Pattern Masking 16%
• Hole Geometry 16%
• Dense Array 16%
• CD Linearity 16%
• Silicon Nitride Membrane 16%
• Equivalent Size 16%
• Exposure Tool 16%
• Hitachi 16%
• Mask Metrology 16%
• Pattern Transfer 16%
• Die-to-die 16%

Engineering

• Limitations 100%
• Electron Optical Lithography 100%
• Scatterer 33%
• Feature Size 33%
• Defects 16%
• Proof-of-Concept 16%
• Lithography 16%
• Nitride 16%
• Tensiles 16%
• Pattern Transfer 16%
• Flat Film 16%
• Edge Roughness 16%

Material Science

• Lithography 100%
• Film 28%
• Scanning Electron Microscopy 14%
• Tungsten 14%
• Film Thickness 14%
• Silicon Nitride 14%