Zinc-indium-oxide: A high conductivity transparent conducting oxide

Julia M. Phillips; R. J. Cava; G. A. Thomas; S. A. Carter; J. Kwo; T. Siegrist; J. J. Krajewski; J. H. Marshall; W. F. Peck; D. H. Rapkine

doi:10.1063/1.115118

Zinc-indium-oxide: A high conductivity transparent conducting oxide

Julia M. Phillips, R. J. Cava, G. A. Thomas, S. A. Carter, J. Kwo, T. Siegrist, J. J. Krajewski, J. H. Marshall, W. F. Peck, D. H. Rapkine

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196 Scopus citations

Abstract

We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium-tin-oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1-1.5 μm range in particular make zinc-indium-oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described.

Original language	English (US)
Pages (from-to)	2246
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115118
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115118

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title = "Zinc-indium-oxide: A high conductivity transparent conducting oxide",

abstract = "We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium-tin-oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1-1.5 μm range in particular make zinc-indium-oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described.",

author = "Phillips, \{Julia M.\} and Cava, \{R. J.\} and Thomas, \{G. A.\} and Carter, \{S. A.\} and J. Kwo and T. Siegrist and Krajewski, \{J. J.\} and Marshall, \{J. H.\} and Peck, \{W. F.\} and Rapkine, \{D. H.\}",

year = "1994",

doi = "10.1063/1.115118",

language = "English (US)",

volume = "67",

pages = "2246",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Zinc-indium-oxide

T2 - A high conductivity transparent conducting oxide

AU - Phillips, Julia M.

AU - Cava, R. J.

AU - Thomas, G. A.

AU - Carter, S. A.

AU - Kwo, J.

AU - Siegrist, T.

AU - Krajewski, J. J.

AU - Marshall, J. H.

AU - Peck, W. F.

AU - Rapkine, D. H.

PY - 1994

Y1 - 1994

N2 - We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium-tin-oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1-1.5 μm range in particular make zinc-indium-oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described.

AB - We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium-tin-oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1-1.5 μm range in particular make zinc-indium-oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described.

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U2 - 10.1063/1.115118

DO - 10.1063/1.115118

M3 - Article

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SN - 0003-6951

VL - 67

SP - 2246

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Zinc-indium-oxide: A high conductivity transparent conducting oxide

Abstract

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