TY - GEN
T1 - ZrO 2 layer thickness dependent electrical and dielectric properties of BST/ZrO 2/BST multilayer thin films
AU - Sahoo, Santosh K.
AU - Misra, D.
AU - Agrawal, D. C.
AU - Mohapatra, Y. N.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba xSr 1-xTiO 3, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO 2 layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO 2 layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO 2/BST multilayer structure is studied. The multilayer Ba 0.8Sr 0.2TiO 3/ZrO 2/Ba 0.8Sr 0.2TiO 3 film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO 2 layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO 2 layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO 2 layer thickness.
AB - Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba xSr 1-xTiO 3, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO 2 layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO 2 layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO 2/BST multilayer structure is studied. The multilayer Ba 0.8Sr 0.2TiO 3/ZrO 2/Ba 0.8Sr 0.2TiO 3 film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO 2 layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO 2 layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO 2 layer thickness.
UR - http://www.scopus.com/inward/record.url?scp=84860174520&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860174520&partnerID=8YFLogxK
U2 - 10.1557/opl.2011.891
DO - 10.1557/opl.2011.891
M3 - Conference contribution
AN - SCOPUS:84860174520
SN - 9781618395719
T3 - Materials Research Society Symposium Proceedings
SP - 1
EP - 7
BT - Multiferroic, Ferroelectric, and Functional Materials, Interfaces and Heterostructures
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -